Electrical injection and detection of spin polarized currents
at Ferromagnetic metal /Semiconductor interfaces
- Electrical spin injection through Schottky interfaces Co/n-doped AlGaAs, Co/ n-doped GaAs, and through interfaces based on insulating tunnel barriers Co/Al2O3/GaAs, Co/Al2O3/AlGaAs and CoFe/MgOGaAs, CoFeB/MgO/GaAs
- Spin injection in quantum wells GaAs/AlGaAs and InGaAs/GaAs, and in p-doped InAs/GaAs quantum dots
- Study of the influence of the temperature, bias voltage, crystalline structure and tunnel barrier thickness
- Study of spinLEDs with perpendicular remanent injector (Co/Pt)
Collaborations :
H. Jaffrès, J.M. George, UMP CNRS-THALES, Palaiseau
A. Lemaître, LPN CNRS, Marcoussis
Phi Hoa Binh, VAST, Hanoi Vietnam
Y. Lu, LPM, Nancy
C. Fontaine, A. Arnoult, LAAS CNRS Toulouse
Technic :
Sous champ magnétique (0,8T) : électroluminescence stationnaire résolue en polarisation, électroluminescence résolue en temps et en polarisation (résolution ultime de 250ps), photocourant résolu en polarisation. Photoluminescence résolue en temps et en polarisation (ps)
References :
R. Fiederling et al. Nature 402, 787 (1999) Würzburg University, Germany
Hanbicki et al. Appl. Phys. Lett., 82 4092 (2003) Naval Research Lab, Washington USA
X. Jiang et al. Phys. Rev. Lett, 94 056601 (2005) IBM Research division, San Jose USA
L. Lombez et al., Appl. Phys. Lett. 90, 081111 (2007), LPCNO-UMP CNRS/THALES-LAAS
Y. Lu et al. Appl. Phys. Lett., 93, 152102 (2008), LPCNO-UMP/CNRS THALES-LPN
VG. Truong et al. Appl. Phys. Lett. 94, 141109 (2009) LPCNO-UMP/CNRS THALES-LPN
P. Renucci et al., Phys. Rev. B 82, 195317 (2010), LPCNO-UMP CNRS/THALES
H. Jaffres, J.M. George, D. Dolfi, G. Baili, P. Renucci, X. Marie, French patent n° 10.01909 « Resonant Diode with magnetic tunnel junction for optoelectronic conversion of polarization », LPCNO-UMP CNRS/THALES