Laboratoire de Physique et Chimie des Nano-objets
Institut National des Sciences Appliquées
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135 avenue de Rangueil, 31077 TOULOUSE CEDEX 4 - FRANCE
Tél : 00 33 05 61 55 96 45 | Fax : (+33) (0)5 61 55 96 97
Accueil du site > LPCNO > Publications > Articles > 2011 > Modeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices
P.-F. Fazzini, C. Bonafos, A. Claverie, A. Hubert, T. Ernst, M. Respaud
Modeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices
J. Appl. Phys. 110, 033524 (2011)
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