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Institut National des Sciences Appliquées
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135 avenue de Rangueil, 31077 TOULOUSE CEDEX 4 - FRANCE
Tél : 00 33 05 61 55 96 45 | Fax : (+33) (0)5 61 55 96 97
Accueil du site > LPCNO > Publications > Articles > 2009 > Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
H. Carrere, V.G. Truong, X. Marie, T. Amand, B. Urbaszek, R. Brenot, F. Lelarge, B. Rousseau
Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
Microelectronics Journal 40 ; 4-5, p 827-829 (2009)
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