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Home page > LPCNO > Groups > Quantum Optoelectronics Group > Main research topics > Electrical injection and detection of spin polarized currents at Ferromagnetic metal /Semiconductor interfaces

Electrical injection and detection of spin polarized currents at Ferromagnetic metal /Semiconductor interfaces

a) Electrical spin injection

- Electrical spin injection through Schottky interfaces Co/n-doped AlGaAs, Co/ n-doped GaAs, and through interfaces based on insulating tunnel barriers Co/Al2O3/GaAs, Co/Al2O3/AlGaAs and CoFe/MgOGaAs, CoFeB/MgO/GaAs
- Spin injection in quantum wells GaAs/AlGaAs and InGaAs/GaAs, and in p-doped InAs/GaAs quantum dots
- Study of the influence of the temperature, bias voltage, crystalline structure and tunnel barrier thickness
- Study of spinLEDs with perpendicular remanent injector (Co/Pt)

b) High-speed pulsed electrical spin injection (sub-nanosecond time scale)

c) Electrical detection of photogenerated spin polarized currents at Semiconductor/Ferromagnetic metal interface

Collaborations :
H. Jaffrès, J.M. George, UMP CNRS-THALES, Palaiseau
A. Lemaître, LPN CNRS, Marcoussis
Phi Hoa Binh, VAST, Hanoi Vietnam
Y. Lu, LPM, Nancy
C. Fontaine, A. Arnoult, LAAS CNRS Toulouse

Technique : Under magnetic field (0,8T) : CW polarization-resolved Electroluminescence, Time and polarization resolved Electroluminescence (maximum resolution 250ps), polarization resolved Photocurrent, Time and polarization resolved Photoluminescence (ps)

Références :
R. Fiederling et al. Nature 402, 787 (1999) Würzburg University, Germany
Hanbicki et al. Appl. Phys. Lett., 82 4092 (2003) Naval Research Lab, Washington USA
X. Jiang et al. Phys. Rev. Lett, 94 056601 (2005) IBM Research division, San Jose USA
L. Lombez et al., Appl. Phys. Lett. 90, 081111 (2007), LPCNO-UMP CNRS/THALES-LAAS
Y. Lu et al. Appl. Phys. Lett., 93, 152102 (2008), LPCNO-UMP/CNRS THALES-LPN
VG. Truong et al. Appl. Phys. Lett. 94, 141109 (2009) LPCNO-UMP/CNRS THALES-LPN
P. Renucci et al., Phys. Rev. B 82, 195317 (2010), LPCNO-UMP CNRS/THALES
H. Jaffres, J.M. George, D. Dolfi, G. Baili, P. Renucci, X. Marie, French patent n° 10.01909 « Resonant Diode with magnetic tunnel junction for optoelectronic conversion of polarization », LPCNO-UMP CNRS/THALES