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135 avenue de Rangueil, 31077 TOULOUSE CEDEX 4 - FRANCE
Tél : 00 33 05 61 55 96 45 | Fax : (+33) (0)5 61 55 96 97
Accueil du site > LPCNO > Publications > Articles > 2016 > Analysis of electrical conduction mechanism in the high temperature range of the nanostructured photoabsorber Cu2SnS3
S. Lahlali, L. Essaleh, M. Belaqziz, H. Chehouani, K. Djessas, B. Viallet
Analysis of electrical conduction mechanism in the high temperature range of the nanostructured photoabsorber Cu2SnS3
Voir en ligne : Physica B 500, 161–164 (2016)
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