Joshya Shyamala Rajagopal secured an integrated five-year master’s degree in physics from Pondicherry University, India. Then she moved to Indian Institute of Science Education and Research – Thiruvananthapuram, India for her Ph.D. on “Ultrafast and Steady State Optical Studies of Dilute Bismide Alloy : GaAs1-xBix. Her graduate research focused on understanding the photo-excited carrier’s dynamics and phonon dynamics in III-V Semiconductors. After completing her Ph.D., Joshya spend one year as a postdoctoral fellow in Prof. Chunlei Guo’s lab at CIOMP, Chinese Academic of Sciences, China, where she worked on Laser-Induced Periodic Surface Structures on metals.
She joined the Quantum Optoelectronics group in LPCNO, INSA de Toulouse, France in October 2019 to study the spin-dependent properties of III-V semiconductors.