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Accueil du site > LPCNO > Séminaires > 2017 > Tenability of quantum dot emission energy in strain engineered InAs/GaAs Quantum Dots for optoelectronic and photonic devices

Tenability of quantum dot emission energy in strain engineered InAs/GaAs Quantum Dots for optoelectronic and photonic devices

Date : 20/03/2017 à 14:00

Titre : Tenability of quantum dot emission energy in strain engineered InAs/GaAs Quantum Dots for optoelectronic and photonic devices

Intervenant : Hassen Maaref

Provenance : Laboratoire de MicroOptoélectronique et Nanostructures, Université de Monastir, Tunisia.

Salle : Salle de séminaire - LPCNO

Résumé : In this presentation , we will first review the main features of the Molecular Beam Epitaxy technique used at the University of Monastir (Tunisia) in order to grow self assembled , three dimensional nanoislands ; in particular : (i) we will describe the growth mechanisms that take place in highly lattice mismatched systems (three dimensional mode) , (ii) we will compare them to that of lattice matched material systems (two dimensional growth mechanism) and (iii) we will discuss how the three dimensional growth mechanism may give rise to nucleation of self- assembled nanoislands. Then, we will give an overview of aspects of structural, electronic and optical properties of quantum dots structures based on the InAs/InGaAs/GaAs material system, paying particular attention to the tenability of quantum dot emission energy in the optoelectronic windows of interest for advanced optoelectronic and photonic devices and to the new third generation approach for increasing the efficiency of photovoltaic devices using the Intermediate band solar cells (IBSC).